AOT7S60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOT7S60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 28 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO-220

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AOT7S60 Datasheet (PDF)

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aot7s60.pdf

AOT7S60/AOB7S60/AOTF7S60TM600V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT7S60 & AOB7S60 & AOTF7S60 have beenfabricated using the advanced MOSTM high voltage IDM 33Aprocess that is designed to deliver high levels of RDS(ON),max 0.6performance and robustness in switching applications. Qg,typ 8.2nCBy providing low R

..2. Size:262K inchange semiconductor
aot7s60.pdf

isc N-Channel MOSFET Transistor AOT7S60FEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

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aot7s60l.pdf

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aot7s65.pdf

AOT7S65/AOB7S65/AOTF7S65TM650V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT7S65 & AOB7S65 & AOTF7S65 have beenfabricated using the advanced MOSTM high voltage IDM 30Aprocess that is designed to deliver high levels of RDS(ON),max 0.65performance and robustness in switching applications. Qg,typ 9.2nCBy providing low

8.2. Size:302K aosemi
aot7s65l.pdf

8.3. Size:255K inchange semiconductor
aot7s65l.pdf

isc N-Channel MOSFET Transistor AOT7S65LFEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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