AOT7S60 PDF and Equivalents Search

 ..1. Size:288K  aosemi
 aot7s60.pdf

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R... See More ⇒

 ..2. Size:288K  aosemi
 aot7s60 aob7s60 aotf7s60.pdf

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R... See More ⇒

 ..3. Size:262K  inchange semiconductor
 aot7s60.pdf

isc N-Channel MOSFET Transistor AOT7S60 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒

 0.1. Size:287K  aosemi
 aot7s60l.pdf

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R... See More ⇒

 8.1. Size:302K  aosemi
 aot7s65.pdf

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low ... See More ⇒

 8.2. Size:302K  aosemi
 aot7s65l.pdf

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low ... See More ⇒

 8.3. Size:303K  aosemi
 aot7s65 aob7s65 aotf7s65.pdf

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low ... See More ⇒

 8.4. Size:255K  inchange semiconductor
 aot7s65l.pdf

isc N-Channel MOSFET Transistor AOT7S65L FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒