AOT9N40 Todos los transistores

 ..1. Size:252K  aosemi
 aot9n40.pdf

AOT9N40 400V,8A N-Channel MOSFET General Description Product Summary VDS The AOT9N40 is fabricated using an advanced high 500V@150 voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 8A levels of performance and robustness in popular AC-DC

 ..2. Size:261K  inchange semiconductor
 aot9n40.pdf

isc N-Channel MOSFET Transistor AOT9N40 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 0.1. Size:252K  aosemi
 aot9n40l.pdf

AOT9N40 400V,8A N-Channel MOSFET General Description Product Summary VDS The AOT9N40 is fabricated using an advanced high 500V@150 voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 8A levels of performance and robustness in popular AC-DC

 9.1. Size:403K  1
 aot9n70 aotf9n70 aob9n70.pdf

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.2. Size:528K  aosemi
 aot9n70.pdf

AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.3. Size:403K  aosemi
 aot9n70 aotf9n70 aob9n70.pdf

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.4. Size:517K  aosemi
 aot9n50 aotf9n50.pdf

AOT9N50/AOTF9N50 500V, 9A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT9N50 & AOTF9N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.5. Size:159K  aosemi
 aot9n50.pdf

AOT9N50/AOTF9N50 500V, 9A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT9N50 & AOTF9N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.6. Size:261K  inchange semiconductor
 aot9n70.pdf

isc N-Channel MOSFET Transistor AOT9N70 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.7. Size:261K  inchange semiconductor
 aot9n50.pdf

isc N-Channel MOSFET Transistor AOT9N50 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos