All MOSFET. AOT9N40 Datasheet

 

AOT9N40 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOT9N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 132 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.1 nC
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 73 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220

 AOT9N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT9N40 Datasheet (PDF)

 ..1. Size:252K  aosemi
 aot9n40.pdf

AOT9N40 AOT9N40

AOT9N40400V,8A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT9N40 is fabricated using an advanced high 500V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V)8Alevels of performance and robustness in popular AC-DC

 ..2. Size:261K  inchange semiconductor
 aot9n40.pdf

AOT9N40 AOT9N40

isc N-Channel MOSFET Transistor AOT9N40FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 0.1. Size:252K  aosemi
 aot9n40l.pdf

AOT9N40 AOT9N40

AOT9N40400V,8A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT9N40 is fabricated using an advanced high 500V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V)8Alevels of performance and robustness in popular AC-DC

 9.1. Size:403K  1
 aot9n70 aotf9n70 aob9n70.pdf

AOT9N40 AOT9N40

AOT9N70/AOTF9N70/AOB9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 & AOB9N70 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.2. Size:528K  aosemi
 aot9n70.pdf

AOT9N40 AOT9N40

AOT9N70/AOTF9N70700V, 9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT9N70 & AOTF9N70 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.3. Size:159K  aosemi
 aot9n50.pdf

AOT9N40 AOT9N40

AOT9N50/AOTF9N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT9N50 & AOTF9N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.4. Size:261K  inchange semiconductor
 aot9n70.pdf

AOT9N40 AOT9N40

isc N-Channel MOSFET Transistor AOT9N70FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.5. Size:261K  inchange semiconductor
 aot9n50.pdf

AOT9N40 AOT9N40

isc N-Channel MOSFET Transistor AOT9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFK180N25T

 

 
Back to Top