AOTF10N65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOTF10N65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 61 nS

Cossⓘ - Capacitancia de salida: 118 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO-220F

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AOTF10N65 datasheet

 ..1. Size:203K  aosemi
 aotf10n65.pdf pdf_icon

AOTF10N65

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:255K  inchange semiconductor
 aotf10n65.pdf pdf_icon

AOTF10N65

isc N-Channel MOSFET Transistor AOTF10N65 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 6.1. Size:375K  aosemi
 aotf10n60.pdf pdf_icon

AOTF10N65

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 6.2. Size:429K  aosemi
 aot10n60 aob10n60 aotf10n60.pdf pdf_icon

AOTF10N65

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AOT8N60, AOT8N65, AOT8N80, AOT9N40, AOT9N50, AOT9N70, AOTF10N50FD, AOTF10N60, 60N06, AOTF10N90, AOTF10T60, AOTF10T60P, AOTF11C60, AOTF11N60, AOTF11N62, AOTF11N70, AOTF11S60