AOTF12N60FD Todos los transistores

 

AOTF12N60FD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF12N60FD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 166 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO-220F
 

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AOTF12N60FD Datasheet (PDF)

 ..1. Size:590K  aosemi
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AOTF12N60FD

AOT12N60FD/AOB12N60FD/AOTF12N60FD600V, 12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60FD/AOB12N60FD/AOTF12N60FD havebeen fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 ..2. Size:250K  inchange semiconductor
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AOTF12N60FD

isc N-Channel MOSFET Transistor AOTF12N60FDFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 5.1. Size:450K  aosemi
 aotf12n60.pdf pdf_icon

AOTF12N60FD

AOT12N60/AOTF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60 & AOTF12N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 5.2. Size:575K  aosemi
 aot12n60 aotf12n60.pdf pdf_icon

AOTF12N60FD

AOT12N60/AOTF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60 & AOTF12N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AOTF11N60 , AOTF11N62 , AOTF11N70 , AOTF11S60 , AOTF11S65 , AOTF12N30 , AOTF12N50 , AOTF12N60 , IRFZ44 , AOTF12N65 , AOTF12T50P , AOTF12T50PL , AOTF12T60 , AOTF12T60P , AOTF13N50 , AOTF14N50 , AOTF14N50FD .

History: 2SJ599-Z | NTHD2110TT1G | IXTA10N60P | SFF1310M | SSF1502D | CS9N65D | CS9N80P

 

 
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