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AOTF12N60FD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF12N60FD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 41 nC
   trⓘ - Время нарастания: 90 ns
   Cossⓘ - Выходная емкость: 166 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO-220F

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AOTF12N60FD Datasheet (PDF)

 ..1. Size:590K  aosemi
 aotf12n60fd.pdf

AOTF12N60FD AOTF12N60FD

AOT12N60FD/AOB12N60FD/AOTF12N60FD600V, 12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60FD/AOB12N60FD/AOTF12N60FD havebeen fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 ..2. Size:250K  inchange semiconductor
 aotf12n60fd.pdf

AOTF12N60FD AOTF12N60FD

isc N-Channel MOSFET Transistor AOTF12N60FDFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 5.1. Size:450K  aosemi
 aotf12n60.pdf

AOTF12N60FD AOTF12N60FD

AOT12N60/AOTF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60 & AOTF12N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 5.2. Size:575K  aosemi
 aot12n60 aotf12n60.pdf

AOTF12N60FD AOTF12N60FD

AOT12N60/AOTF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60 & AOTF12N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 5.3. Size:250K  inchange semiconductor
 aotf12n60.pdf

AOTF12N60FD AOTF12N60FD

isc N-Channel MOSFET Transistor AOTF12N60FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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