AOTF12T50P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOTF12T50P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 54 nS

Cossⓘ - Capacitancia de salida: 63 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: TO-220F

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AOTF12T50P datasheet

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 aotf12t50p.pdf pdf_icon

AOTF12T50P

AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 0.1. Size:447K  aosemi
 aotf12t50pl.pdf pdf_icon

AOTF12T50P

AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 0.2. Size:251K  inchange semiconductor
 aotf12t50pl.pdf pdf_icon

AOTF12T50P

isc N-Channel MOSFET Transistor AOTF12T50PL FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION General Lighting for LED and CCFL AC/DC Power supplies ABSOL

 7.1. Size:233K  aosemi
 aotf12t60.pdf pdf_icon

AOTF12T50P

AOTF12T60 600V,12A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

MOSTRAR MÁS

Otros transistores... AOTF11N70, AOTF11S60, AOTF11S65, AOTF12N30, AOTF12N50, AOTF12N60, AOTF12N60FD, AOTF12N65, IRF1404, AOTF12T50PL, AOTF12T60, AOTF12T60P, AOTF13N50, AOTF14N50, AOTF14N50FD, AOTF15S60, AOTF15S65