All MOSFET. AOTF12T50P Datasheet

 

AOTF12T50P MOSFET. Datasheet pdf. Equivalent

Type Designator: AOTF12T50P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 43 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 54 nS

Drain-Source Capacitance (Cd): 63 pF

Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm

Package: TO-220F

AOTF12T50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTF12T50P Datasheet (PDF)

1.1. aotf12t50p.pdf Size:447K _aosemi

AOTF12T50P
AOTF12T50P

AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V • Low RDS(ON) IDM 48A • Low Ciss and Crss RDS(ON),max < 0.5Ω • High Current Capability Qg,typ 22nC • RoHS and Halogen Free Compliant Eoss @ 400V 4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CC

1.2. aotf12t50pl.pdf Size:447K _aosemi

AOTF12T50P
AOTF12T50P

AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V • Low RDS(ON) IDM 48A • Low Ciss and Crss RDS(ON),max < 0.5Ω • High Current Capability Qg,typ 22nC • RoHS and Halogen Free Compliant Eoss @ 400V 4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CC

 3.1. aotf12t60p.pdf Size:498K _aosemi

AOTF12T50P
AOTF12T50P

AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology VDS @ Tj,max 700V • Low RDS(ON) IDM 48A • Low Ciss and Crss RDS(ON),max < 0.52Ω • High Current Capability Qg,typ 33nC • RoHS and Halogen Free Compliant Eoss @ 400V 4.4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED

3.2. aotf12t60.pdf Size:233K _aosemi

AOTF12T50P
AOTF12T50P

AOTF12T60 600V,12A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Latest Trench Power AlphaMOS-II technology • Low RDS(ON) IDM 48A • Low Ciss and Crss RDS(ON),max < 0.52Ω • High Current Capability Qg,typ 33nC • RoHS and Halogen Free Compliant Eoss @ 400V 4.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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