All MOSFET. AOTF12T50P Datasheet

 

AOTF12T50P Datasheet and Replacement


   Type Designator: AOTF12T50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-220F
 

 AOTF12T50P substitution

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AOTF12T50P Datasheet (PDF)

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AOTF12T50P

AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

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AOTF12T50P

AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 0.2. Size:251K  inchange semiconductor
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AOTF12T50P

isc N-Channel MOSFET Transistor AOTF12T50PLFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONGeneral Lighting for LED and CCFLAC/DC Power suppliesABSOL

 7.1. Size:233K  aosemi
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AOTF12T50P

AOTF12T60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

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Datasheet: AOTF11N70 , AOTF11S60 , AOTF11S65 , AOTF12N30 , AOTF12N50 , AOTF12N60 , AOTF12N60FD , AOTF12N65 , IRF1404 , AOTF12T50PL , AOTF12T60 , AOTF12T60P , AOTF13N50 , AOTF14N50 , AOTF14N50FD , AOTF15S60 , AOTF15S65 .

History: 12N65KG-TQ | AM3407

Keywords - AOTF12T50P MOSFET datasheet

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 AOTF12T50P equivalent finder
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