AOTF12T50PL Todos los transistores

 

AOTF12T50PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF12T50PL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 54 nS
   Cossⓘ - Capacitancia de salida: 63 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO-220F

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AOTF12T50PL Datasheet (PDF)

 ..1. Size:447K  aosemi
aotf12t50pl.pdf

AOTF12T50PL
AOTF12T50PL

AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 ..2. Size:251K  inchange semiconductor
aotf12t50pl.pdf

AOTF12T50PL
AOTF12T50PL

isc N-Channel MOSFET Transistor AOTF12T50PLFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONGeneral Lighting for LED and CCFLAC/DC Power suppliesABSOL

 4.1. Size:447K  aosemi
aotf12t50p.pdf

AOTF12T50PL
AOTF12T50PL

AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 7.1. Size:233K  aosemi
aotf12t60.pdf

AOTF12T50PL
AOTF12T50PL

AOTF12T60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 7.2. Size:498K  aosemi
aotf12t60p.pdf

AOTF12T50PL
AOTF12T50PL

AOB12T60P/AOTF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

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History: AOTF12N65 | RJK0392DPA

 

 
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History: AOTF12N65 | RJK0392DPA

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