AOTF12T50PL Specs and Replacement
Type Designator: AOTF12T50PL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 63 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220F
AOTF12T50PL substitution
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AOTF12T50PL datasheet
aotf12t50pl.pdf
AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
aotf12t50pl.pdf
isc N-Channel MOSFET Transistor AOTF12T50PL FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION General Lighting for LED and CCFL AC/DC Power supplies ABSOL... See More ⇒
aotf12t50p.pdf
AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
aotf12t60.pdf
AOTF12T60 600V,12A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
Detailed specifications: AOTF11S60, AOTF11S65, AOTF12N30, AOTF12N50, AOTF12N60, AOTF12N60FD, AOTF12N65, AOTF12T50P, IRLZ44N, AOTF12T60, AOTF12T60P, AOTF13N50, AOTF14N50, AOTF14N50FD, AOTF15S60, AOTF15S65, AOTF16N50
Keywords - AOTF12T50PL MOSFET specs
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