AOTF27S60 Todos los transistores

 

AOTF27S60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOTF27S60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 27 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 33 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 0.16 Ohm

Empaquetado / Estuche: TO-220F

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AOTF27S60 Datasheet (PDF)

0.1. aotf27s60.pdf Size:295K _aosemi

AOTF27S60
AOTF27S60

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

0.2. aot27s60 aob27s60 aotf27s60.pdf Size:376K _aosemi

AOTF27S60
AOTF27S60

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 0.3. aotf27s60.pdf Size:236K _inchange_semiconductor

AOTF27S60
AOTF27S60

isc N-Channel MOSFET Transistor AOTF27S60FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.16(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge

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