AOTF27S60 - описание и поиск аналогов

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin

isc N-Channel MOSFET Transistor AOTF27S60 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge

AOTF2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V)

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl

AOTF2146L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

AOTF20B65LN2 TM 650V, 20A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 20A C) Very low VCE(sat) VCE(sat) (TJ=25 1.54V C) Very fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability Low Turn-Of

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOTF20N40 400V,20A N-Channel MOSFET General Description Product Summary VDS 500@150 The AOTF20N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET General Description Product Summary VDS The AOT298L & AOB298L & AOTF298L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOTF2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V)

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin

AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General Description Product Summary VDS The AOT240L & AOB240L & AOTF240L uses Trench 40V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 105A/85A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT2N60/AOTF2N60 600V,2A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 2A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2916L & AOTF2916L uses trench MOSFET 100V technology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOT2142L/AOTF2142L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A / 112A Low Gate Charge RDS(ON) (at VGS=10V)

AOTF20C60P 600V,20A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max

AOT29S50/AOB29S50/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced MOSTM high voltage IDM 120A process that is designed to deliver high levels of RDS(ON),max 0.15 performance and robustness in switching applications. Qg,typ 26.6nC By provi

AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOTF20B65M2 TM 650V, 20A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 20A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

AOT20C60/AOB20C60/AOTF20C60 600V,20A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max

AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General Description Product Summary VDS The AOT240L & AOB240L & AOTF240L uses Trench 40V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 105A/85A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOTF286L 80V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 80V Low RDS(ON) ID (at VGS=10V) 56A Low Gate Charge RDS(ON) (at VGS=10V)

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

AOTF260L 60V N-Channel MOSFET General Description Product Summary VDS The AOTF260L uses Trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 92A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

AOT292L/AOB292L/AOTF292L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)

AOTF290L 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 72A Low Gate Charge RDS(ON) (at VGS=10V)

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOTF20B65M1 TM 650V, 20A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 20A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

AOTF256L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOTF256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOTF296L 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 41A Low Gate Charge RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOTF25S65L FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

isc N-Channel MOSFET Transistor AOTF2146L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor AOTF20N40 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor AOTF2910L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

isc N-Channel MOSFET Transistor AOTF298L FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 14.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge

isc N-Channel MOSFET Transistor AOTF2144L FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor AOTF20S60L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor AOTF240L FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor AOTF20S60 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor AOTF20N60 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.37 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor AOTF22N50 FEATURES Drain Current I = 22A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor AOTF2916L FEATURES Drain-source on-resistance RDS(on) 34m @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor AOTF2142L FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses Optimized for fast-switching applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch

isc N-Channel MOSFET Transistor AOTF20C60P FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION General Lighting for LED and CCFL AC/DC Power supplies for Ind

isc N-Channel MOSFET Transistor AOTF29S50 FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor AOTF2918L FEATURES Drain Current I = 58A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

isc N-Channel MOSFET Transistor AOTF288L FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 9.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

isc N-Channel MOSFET Transistor AOTF286L FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 6.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

isc N-Channel MOSFET Transistor AOTF266L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

isc N-Channel MOSFET Transistor AOTF25S65 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor AOTF260L FEATURES Drain Current I = 92A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

isc N-Channel MOSFET Transistor AOT292L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

isc N-Channel MOSFET Transistor AOTF290L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

isc N-Channel MOSFET Transistor AOTF29S50L FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF2618L FEATURES With TO-220F packaging High speed switching Easy to use The most efficient high frequency switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applicat

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF2210L FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate

isc N-Channel MOSFET Transistor AOTF262L FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

isc N-Channel MOSFET Transistor AOTF256L FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

sc N-Channel MOSFET Transistor AOTF2606L FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATIN

isc N-Channel MOSFET Transistor AOTF296L FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene