AOTF2910L Todos los transistores

 

AOTF2910L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF2910L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TO-220F
 

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AOTF2910L Datasheet (PDF)

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 aob2910l aot2910l aotf2910l.pdf pdf_icon

AOTF2910L

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..2. Size:434K  aosemi
 aotf2910l.pdf pdf_icon

AOTF2910L

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..3. Size:236K  inchange semiconductor
 aotf2910l.pdf pdf_icon

AOTF2910L

isc N-Channel MOSFET Transistor AOTF2910LFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 7.1. Size:409K  aosemi
 aotf2916l.pdf pdf_icon

AOTF2910L

AOT2916L/AOTF2916L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2916L & AOTF2916L uses trench MOSFET 100Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AOTF2606L , AOTF260L , AOTF2610L , AOTF2618L , AOTF262L , AOTF266L , AOTF27S60 , AOTF288L , 8205A , AOTF2916L , AOTF2918L , AOTF29S50 , AOTF2N60 , AOTF3N100 , AOTF3N50 , AOTF3N80 , AOTF3N90 .

 

 
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