AOTF3N90 Todos los transistores

 ..1. Size:272K  aosemi
 aotf3n90.pdf

AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.4A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 ..2. Size:252K  inchange semiconductor
 aotf3n90.pdf

isc N-Channel MOSFET Transistor AOTF3N90 FEATURES Drain Current I =2.4A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =6.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.1. Size:383K  aosemi
 aot3n100 aotf3n100.pdf

AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 8.2. Size:158K  aosemi
 aotf3n50.pdf

AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 3A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.3. Size:329K  aosemi
 aotf3n100.pdf

AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 8.4. Size:274K  aosemi
 aotf3n80.pdf

AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary VDS 900V@150 The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.8A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 8.5. Size:251K  inchange semiconductor
 aotf3n50.pdf

isc N-Channel MOSFET Transistor AOTF3N50 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 8.6. Size:252K  inchange semiconductor
 aotf3n100.pdf

isc N-Channel MOSFET Transistor AOTF3N100 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 8.7. Size:252K  inchange semiconductor
 aotf3n80.pdf

isc N-Channel MOSFET Transistor AOTF3N80 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =4.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos