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AOTF3N90 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF3N90
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 34 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6.7 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для AOTF3N90

 

 

AOTF3N90 Datasheet (PDF)

 ..1. Size:272K  aosemi
 aotf3n90.pdf

AOTF3N90 AOTF3N90

AOTF3N90900V, 2.4A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF3N90 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.4Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 ..2. Size:252K  inchange semiconductor
 aotf3n90.pdf

AOTF3N90 AOTF3N90

isc N-Channel MOSFET Transistor AOTF3N90FEATURESDrain Current I =2.4A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =6.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.1. Size:158K  aosemi
 aotf3n50.pdf

AOTF3N90 AOTF3N90

AOT3N50/AOTF3N50500V, 3A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT3N50 & AOTF3N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 3Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.2. Size:329K  aosemi
 aotf3n100.pdf

AOTF3N90 AOTF3N90

AOT3N100/AOTF3N1001000V,2.8A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT3N100 & AOTF3N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 8.3. Size:274K  aosemi
 aotf3n80.pdf

AOTF3N90 AOTF3N90

AOTF3N80800V, 2.8A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOTF3N80 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.8Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 8.4. Size:251K  inchange semiconductor
 aotf3n50.pdf

AOTF3N90 AOTF3N90

isc N-Channel MOSFET Transistor AOTF3N50FEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.5. Size:252K  inchange semiconductor
 aotf3n100.pdf

AOTF3N90 AOTF3N90

isc N-Channel MOSFET Transistor AOTF3N100FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 8.6. Size:252K  inchange semiconductor
 aotf3n80.pdf

AOTF3N90 AOTF3N90

isc N-Channel MOSFET Transistor AOTF3N80FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =4.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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