AOTF6N90 Todos los transistores

 ..1. Size:184K  aosemi
 aotf6n90.pdf

AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 6A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..2. Size:252K  inchange semiconductor
 aotf6n90.pdf

isc N-Channel MOSFET Transistor AOTF6N90 FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =2.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.1. Size:755K  aosemi
 aotf600a70fl aot600a70fl.pdf

AOTF600A70FL/AOT600A70FL TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 9.2. Size:742K  aosemi
 aotf66920l.pdf

AOTF66920L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 41A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.3. Size:370K  aosemi
 aotf66811l.pdf

AOTF66811L TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 80A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)

 9.4. Size:376K  aosemi
 aotf66613l.pdf

AOTF66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 90A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 9.5. Size:793K  aosemi
 aotf600a70l.pdf

AOTF600A70L/AOT600A70L/AOB600A70L TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 9.6. Size:483K  aosemi
 aotf600a60l.pdf

AOTF600A60L/AOT600A60L/AOB600A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

 9.7. Size:365K  aosemi
 aotf66919l.pdf

AOTF66919L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.8. Size:511K  aosemi
 aotf600a70l aot600a70l aob600a70l.pdf

AOTF600A70L/AOT600A70L/AOB600A70L TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 9.9. Size:530K  aosemi
 aotf600a60l aot600a60l aob600a60l.pdf

AOTF600A60L/AOT600A60L/AOB600A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

 9.10. Size:750K  aosemi
 aotf600a70fl.pdf

AOTF600A70FL/AOT600A70FL TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 9.11. Size:723K  aosemi
 aotf66616l.pdf

AOTF66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 72.5A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)