AOTF6N90 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOTF6N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 58 nS
Drain-Source Capacitance (Cd): 82 pF
Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm
Package: TO-220F
AOTF6N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOTF6N90 Datasheet (PDF)
1.1. aotf6n90.pdf 
Size:184K _aosemi
AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 6A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 2.2Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche ca
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