AOTF6N90 Datasheet and Replacement
Type Designator: AOTF6N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 82 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-220F
AOTF6N90 substitution
AOTF6N90 Datasheet (PDF)
aotf6n90.pdf

AOTF6N90900V,6A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF6N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 6Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aotf6n90.pdf

isc N-Channel MOSFET Transistor AOTF6N90FEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aotf66920l.pdf

AOTF66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 41A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aotf66811l.pdf

AOTF66811LTM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 80A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)
Datasheet: AOTF474 , AOTF4N60 , AOTF4N90 , AOTF4S60 , AOTF4T60P , AOTF5N100 , AOTF5N50 , AOTF5N50FD , 10N65 , AOTF7N60 , AOTF7N60FD , AOTF7N65 , AOTF7N70 , AOTF7S65 , AOTF7T60 , AOTF7T60P , AOTF8N50 .
Keywords - AOTF6N90 MOSFET datasheet
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