All MOSFET. AOTF6N90 Datasheet


AOTF6N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOTF6N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 58 nS

Drain-Source Capacitance (Cd): 82 pF

Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

Package: TO-220F

AOTF6N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


AOTF6N90 Datasheet (PDF)

1.1. aotf6n90.pdf Size:184K _aosemi


AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 6A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 2.2Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche ca

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