AOU1N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOU1N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.7 nS
Cossⓘ - Capacitancia de salida: 14.5 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm
Encapsulados: TO-251
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AOU1N60 datasheet
aou1n60.pdf
AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aod1n60 aou1n60 aoi1n60.pdf
AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aou1n60.pdf
isc N-Channel MOSFET Transistor AOU1N60 FEATURES Drain Current I =1.3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 9.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose
Otros transistores... AOTF8N50 , AOTF8N60 , AOTF8N65 , AOTF8N80 , AOTF8T50P , AOTF9N50 , AOTF9N70 , AOTF9N90 , STP65NF06 , AOU2N60 , AOU2N60A , AOU3N50 , AOU3N60 , AOU4N60 , AOU4S60 , AOU7S65 , AOV11S60 .
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