AOU3N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOD3N50/AOU3N50500V, 3A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N50 & AOU3N50 have been fabricated usingan advanced high voltage MOSFET process that isVDS 600V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.8Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

AOD3N50/AOU3N50500V, 3A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N50 & AOU3N50 have been fabricated usingan advanced high voltage MOSFET process that isVDS 600V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.8Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOU3N50FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

AOD3N60/AOU3N60600V,2.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N60 & AOU3N60 have been fabricated usingan advanced high voltage MOSFET process that is VDS 700V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.5Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOU3N60FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =3.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose