AOU4N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOU4N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 53 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
Encapsulados: TO-251
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AOU4N60 datasheet
aou4n60.pdf
AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 4A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aod4n60 aoi4n60 aou4n60.pdf
AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 4A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aou4n60.pdf
isc N-Channel MOSFET Transistor AOU4N60 FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a
Otros transistores... AOTF9N50 , AOTF9N70 , AOTF9N90 , AOU1N60 , AOU2N60 , AOU2N60A , AOU3N50 , AOU3N60 , IRF830 , AOU4S60 , AOU7S65 , AOV11S60 , AOV15S60 , AOV20S60 , AOW10N60 , AOW10N65 , AOW10T60P .
History: SWD7N65D | AP03N70J-HF | SWD7N60D | HCA70R180 | IPP60R099P7 | SW2N60 | 4N60L-TF1-T
History: SWD7N65D | AP03N70J-HF | SWD7N60D | HCA70R180 | IPP60R099P7 | SW2N60 | 4N60L-TF1-T
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