All MOSFET. AOU4N60 Datasheet

 

AOU4N60 Datasheet and Replacement


   Type Designator: AOU4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-251
 

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AOU4N60 Datasheet (PDF)

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AOU4N60

AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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AOU4N60

AOD4N60/AOI4N60/AOU4N60600V,4A N-Channel MOSFETGeneral Description Product SummaryThe AOD4N60 & AOI4N60 & AOU4N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 4Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..3. Size:274K  inchange semiconductor
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AOU4N60

isc N-Channel MOSFET Transistor AOU4N60FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Datasheet: AOTF9N50 , AOTF9N70 , AOTF9N90 , AOU1N60 , AOU2N60 , AOU2N60A , AOU3N50 , AOU3N60 , IRF1405 , AOU4S60 , AOU7S65 , AOV11S60 , AOV15S60 , AOV20S60 , AOW10N60 , AOW10N65 , AOW10T60P .

History: OSG70R1K4FF | IXTA4N150HV | PMZ320UPE | 2SK2130 | SLD60R380S2

Keywords - AOU4N60 MOSFET datasheet

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