AOU7S65 Todos los transistores

 

AOU7S65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOU7S65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO-251

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AOU7S65 datasheet

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 aou7s65.pdf pdf_icon

AOU7S65

AOD7S65/AOU7S65/AOI7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low RD

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 aod7s65 aou7s65 aoi7s65.pdf pdf_icon

AOU7S65

AOD7S65/AOU7S65/AOI7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low RD

 ..3. Size:274K  inchange semiconductor
 aou7s65.pdf pdf_icon

AOU7S65

isc N-Channel MOSFET Transistor AOU7S65 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 8.1. Size:289K  aosemi
 aou7s60.pdf pdf_icon

AOU7S65

AOD7S60/AOU7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOD7S60 & AOU7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOSS

MOSTRAR MÁS

Otros transistores... AOTF9N90 , AOU1N60 , AOU2N60 , AOU2N60A , AOU3N50 , AOU3N60 , AOU4N60 , AOU4S60 , IRF9640 , AOV11S60 , AOV15S60 , AOV20S60 , AOW10N60 , AOW10N65 , AOW10T60P , AOW11N60 , AOW11S60 .

History: STW32N65M5 | IXTT240N15X4HV | IXTP34N65X2 | 4N60L-TF1-T | HCA70R180 | 4N65L-TM3-T | IPP60R099P7

 

 

 

 

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