AOW10T60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOW10T60P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 208 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 26 nC
Tiempo de subida (tr): 54 nS
Conductancia de drenaje-sustrato (Cd): 56 pF
Resistencia entre drenaje y fuente RDS(on): 0.7 Ohm
Paquete / Cubierta: TO-262
Búsqueda de reemplazo de MOSFET AOW10T60P
AOW10T60P Datasheet (PDF)
aow10t60p.pdf
AOW10T60P/AOWF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max
aow10n60.pdf
AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aow10n60 aowf10n60.pdf
AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aow10n65.pdf
AOW10N65/AOWF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW10N65/AOWF10N65 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
aow10n60.pdf
isc N-Channel MOSFET Transistor AOW10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aow10n65.pdf
isc N-Channel MOSFET Transistor AOW10N65FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
