AOW10T60P - Даташиты. Аналоги. Основные параметры

AOW10T60P/AOWF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max

AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOW10N60/AOWF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOW10N60 & AOWF10N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOW10N65/AOWF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW10N65/AOWF10N65 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOW10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor AOW10N65FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo