AOW15S65 Todos los transistores

 

AOW15S65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOW15S65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 58 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO-262

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AOW15S65 datasheet

 ..1. Size:262K  aosemi
 aow15s65 aowf15s65.pdf pdf_icon

AOW15S65

AOW15S65/AOWF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW15S65 & AOWF15S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 60A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 17.2nC By providing low RDS(on), Qg

 ..2. Size:262K  aosemi
 aow15s65.pdf pdf_icon

AOW15S65

AOW15S65/AOWF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW15S65 & AOWF15S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 60A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 17.2nC By providing low RDS(on), Qg

 ..3. Size:298K  inchange semiconductor
 aow15s65.pdf pdf_icon

AOW15S65

isc N-Channel MOSFET Transistor AOW15S65 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 7.1. Size:327K  aosemi
 aow15s60.pdf pdf_icon

AOW15S65

AOW15S60/AOWF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW15S60 & AOWF15S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 63A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 16nC By providing low RDS(on), Qg an

MOSTRAR MÁS

Otros transistores... AOW11N60 , AOW11S60 , AOW11S65 , AOW12N50 , AOW12N60 , AOW12N65 , AOW14N50 , AOW15S60 , IRF740 , AOW20C60 , AOW20S60 , AOW2500 , AOW25S65 , AOW284 , AOW2918 , AOW298 , AOW29S50 .

History: HCA60R040 | IRF7342QPBF | HCD80R1K2 | JCS10N60BT | SWB075R06ET | KF4N60F | IRF250P224

 

 

 

 

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