AOW15S65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOW15S65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 58 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO-262

Búsqueda de reemplazo de MOSFET AOW15S65

AOW15S65 Datasheet (PDF)

..1. Size:262K aosemi
aow15s65.pdf

AOW15S65/AOWF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW15S65 & AOWF15S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 60Adesigned to deliver high levels of performance and RDS(ON),max 0.29robustness in switching applications. Qg,typ 17.2nCBy providing low RDS(on), Qg

..2. Size:298K inchange semiconductor
aow15s65.pdf

isc N-Channel MOSFET Transistor AOW15S65FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

7.1. Size:327K aosemi
aow15s60.pdf

AOW15S60/AOWF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW15S60 & AOWF15S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 63Adesigned to deliver high levels of performance and RDS(ON),max 0.29robustness in switching applications. Qg,typ 16nCBy providing low RDS(on), Qg an

7.2. Size:298K inchange semiconductor
aow15s60.pdf

isc N-Channel MOSFET Transistor AOW15S60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: