All MOSFET. AOW15S65 Datasheet

 

AOW15S65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOW15S65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.2 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO-262

 AOW15S65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOW15S65 Datasheet (PDF)

 ..1. Size:262K  aosemi
 aow15s65.pdf

AOW15S65 AOW15S65

AOW15S65/AOWF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW15S65 & AOWF15S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 60Adesigned to deliver high levels of performance and RDS(ON),max 0.29robustness in switching applications. Qg,typ 17.2nCBy providing low RDS(on), Qg

 ..2. Size:298K  inchange semiconductor
 aow15s65.pdf

AOW15S65 AOW15S65

isc N-Channel MOSFET Transistor AOW15S65FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.1. Size:327K  aosemi
 aow15s60.pdf

AOW15S65 AOW15S65

AOW15S60/AOWF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW15S60 & AOWF15S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 63Adesigned to deliver high levels of performance and RDS(ON),max 0.29robustness in switching applications. Qg,typ 16nCBy providing low RDS(on), Qg an

 7.2. Size:298K  inchange semiconductor
 aow15s60.pdf

AOW15S65 AOW15S65

isc N-Channel MOSFET Transistor AOW15S60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: AOW66412

 

 
Back to Top