AOW15S65 PDF and Equivalents Search

 

AOW15S65 Specs and Replacement

Type Designator: AOW15S65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO-262

AOW15S65 substitution

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AOW15S65 datasheet

 ..1. Size:262K  aosemi
aow15s65 aowf15s65.pdf pdf_icon

AOW15S65

AOW15S65/AOWF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW15S65 & AOWF15S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 60A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 17.2nC By providing low RDS(on), Qg ... See More ⇒

 ..2. Size:262K  aosemi
aow15s65.pdf pdf_icon

AOW15S65

AOW15S65/AOWF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW15S65 & AOWF15S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 60A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 17.2nC By providing low RDS(on), Qg ... See More ⇒

 ..3. Size:298K  inchange semiconductor
aow15s65.pdf pdf_icon

AOW15S65

isc N-Channel MOSFET Transistor AOW15S65 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 7.1. Size:327K  aosemi
aow15s60.pdf pdf_icon

AOW15S65

AOW15S60/AOWF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW15S60 & AOWF15S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 63A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 16nC By providing low RDS(on), Qg an... See More ⇒

Detailed specifications: AOW11N60, AOW11S60, AOW11S65, AOW12N50, AOW12N60, AOW12N65, AOW14N50, AOW15S60, IRF740, AOW20C60, AOW20S60, AOW2500, AOW25S65, AOW284, AOW2918, AOW298, AOW29S50

Keywords - AOW15S65 MOSFET specs

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