AOW2500 Todos los transistores

 ..1. Size:269K  aosemi
 aow2500.pdf

AOW2500 150V N-Channel MOSFET General Description Product Summary VDS The AOW2500 uses Trench MOSFET technology that is 150V ID (at VGS=10V) 152A uniquely optimized to provide the most efficient high RDS(ON) (at VGS=10V)

 ..2. Size:297K  inchange semiconductor
 aow2500.pdf

isc N-Channel MOSFET Transistor AOW2500 FEATURES Drain Current I = 152A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 6.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 8.1. Size:308K  aosemi
 aow2502.pdf

AOW2502 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:297K  inchange semiconductor
 aow2502.pdf

isc N-Channel MOSFET Transistor AOW2502 FEATURES Drain Current I = 106A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R =10.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.1. Size:265K  aosemi
 aow25s65 aowf25s65.pdf

AOW25S65/AOWF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW25S65 & AOWF25S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 104A designed to deliver high levels of performance and RDS(ON),max 0.19 robustness in switching applications. Qg,typ 26.4nC By providing low RDS(on), Qg

 9.2. Size:265K  aosemi
 aow25s65.pdf

AOW25S65/AOWF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW25S65 & AOWF25S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 104A designed to deliver high levels of performance and RDS(ON),max 0.19 robustness in switching applications. Qg,typ 26.4nC By providing low RDS(on), Qg

 9.3. Size:298K  inchange semiconductor
 aow25s65.pdf

isc N-Channel MOSFET Transistor AOW25S65 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp