AOW2500 Datasheet and Replacement
Type Designator: AOW2500
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 152 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 586 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO-262
AOW2500 substitution
AOW2500 Datasheet (PDF)
aow2500.pdf

AOW2500150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW2500 uses Trench MOSFET technology that is 150V ID (at VGS=10V) 152Auniquely optimized to provide the most efficient high RDS(ON) (at VGS=10V)
aow2500.pdf

isc N-Channel MOSFET Transistor AOW2500FEATURESDrain Current I = 152A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aow2502.pdf

AOW2502150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)
aow2502.pdf

isc N-Channel MOSFET Transistor AOW2502FEATURESDrain Current I = 106A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R =10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: AOW12N50 , AOW12N60 , AOW12N65 , AOW14N50 , AOW15S60 , AOW15S65 , AOW20C60 , AOW20S60 , IRF540 , AOW25S65 , AOW284 , AOW2918 , AOW298 , AOW29S50 , AOW410 , AOW418 , AOW480 .
History: IRFHM4234 | FRK264H | 40N20 | IXTP1R6N50P | CS4N60A3TDY | QM2504W
Keywords - AOW2500 MOSFET datasheet
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History: IRFHM4234 | FRK264H | 40N20 | IXTP1R6N50P | CS4N60A3TDY | QM2504W



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