AOW2918 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOW2918
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 267 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 V
   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 1530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO-262

Búsqueda de reemplazo de MOSFET AOW2918

AOW2918 Datasheet (PDF)

..1. Size:253K aosemi
aow2918.pdf

AOW2918100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW2918 uses Trench MOSFET technology that 100Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 90Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

..2. Size:283K inchange semiconductor
aow2918.pdf

isc N-Channel MOSFET Transistor AOW2918FEATURESDrain Current I = 90A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

9.1. Size:251K aosemi
aow298.pdf

AOW298 100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW298 uses Trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 58Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

9.2. Size:424K aosemi
aow296.pdf

AOW296/AOWF296TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)

9.3. Size:251K aosemi
aow29s50.pdf

AOW29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOW29S50 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 120Ahigh levels of performance and robustness in switching RDS(ON),max 0.15applications. Qg,typ 26.6nCBy providing low RDS(on), Qg and EOSS along with

9.4. Size:310K aosemi
aow290.pdf

AOW290100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)

9.5. Size:228K aosemi
aow292.pdf

AOW292100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 105A Low Gate Charge RDS(ON) (at VGS=10V)

9.6. Size:283K inchange semiconductor
aow298.pdf

isc N-Channel MOSFET Transistor AOW298FEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

9.7. Size:284K inchange semiconductor
aow296.pdf

isc N-Channel MOSFET Transistor AOW296FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

9.8. Size:300K inchange semiconductor
aow29s50.pdf

isc N-Channel MOSFET Transistor AOW29S50FEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.9. Size:283K inchange semiconductor
aow290.pdf

isc N-Channel MOSFET Transistor AOW290FEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

9.10. Size:283K inchange semiconductor
aow292.pdf

isc N-Channel MOSFET Transistor AOW292FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

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