AOW2918 Todos los transistores

 ..1. Size:253K  aosemi
 aow2918.pdf

AOW2918 100V N-Channel MOSFET General Description Product Summary VDS The AOW2918 uses Trench MOSFET technology that 100V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 90A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 ..2. Size:283K  inchange semiconductor
 aow2918.pdf

isc N-Channel MOSFET Transistor AOW2918 FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

 9.1. Size:251K  aosemi
 aow298.pdf

AOW298 100V N-Channel MOSFET General Description Product Summary VDS The AOW298 uses Trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 58A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 9.2. Size:424K  aosemi
 aow296.pdf

AOW296/AOWF296 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)

 9.3. Size:251K  aosemi
 aow29s50.pdf

AOW29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOW29S50 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 120A high levels of performance and robustness in switching RDS(ON),max 0.15 applications. Qg,typ 26.6nC By providing low RDS(on), Qg and EOSS along with

 9.4. Size:310K  aosemi
 aow290.pdf

AOW290 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)

 9.5. Size:228K  aosemi
 aow292.pdf

 9.6. Size:283K  inchange semiconductor
 aow298.pdf

isc N-Channel MOSFET Transistor AOW298 FEATURES Drain Current I = 58A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 14.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.7. Size:284K  inchange semiconductor
 aow296.pdf

isc N-Channel MOSFET Transistor AOW296 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener

 9.8. Size:300K  inchange semiconductor
 aow29s50.pdf

isc N-Channel MOSFET Transistor AOW29S50 FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.9. Size:283K  inchange semiconductor
 aow290.pdf

isc N-Channel MOSFET Transistor AOW290 FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 3.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.10. Size:283K  inchange semiconductor
 aow292.pdf

isc N-Channel MOSFET Transistor AOW292 FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene