All MOSFET. AOW2918 Datasheet

 

AOW2918 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOW2918

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 267 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 24 nS

Drain-Source Capacitance (Cd): 1530 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO-262

AOW2918 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOW2918 Datasheet (PDF)

1.1. aow2918.pdf Size:253K _aosemi

AOW2918
AOW2918

AOW2918 100V N-Channel MOSFET General Description Product Summary VDS The AOW2918 uses Trench MOSFET technology that 100V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 90A frequency switching performance. Power losses are RDS(ON) (at VGS=10V) < 7mΩ minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well

5.1. aow29s50.pdf Size:251K _aosemi

AOW2918
AOW2918

AOW29S50 TM 500V 29A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 600V The AOW29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver IDM 120A high levels of performance and robustness in switching RDS(ON),max 0.15Ω applications. Qg,typ 26.6nC By providing low RDS(on), Qg and EOSS along with

5.2. aow296.pdf Size:424K _aosemi

AOW2918
AOW2918

AOW296/AOWF296 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V • Trench Power AlphaSGTTM technology • Low RDS(ON) RDS(ON) (at VGS=10V) < 9.7mΩ • Low Gate Charge • Optimized for fast-switching applications RDS(ON) (at VGS=6V) < 12.2mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectific

5.3. aow290.pdf Size:310K _aosemi

AOW2918
AOW2918

AOW290 100V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 100V • Low RDS(ON) ID (at VGS=10V) 140A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.2mΩ • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converte

5.4. aow292.pdf Size:228K _aosemi

AOW2918
AOW2918

AOW292 100V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 100V • Low RDS(ON) ID (at VGS=10V) 105A • Low Gate Charge RDS(ON) (at VGS=10V) < 4.1mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=6V) < 4.9mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters

5.5. aow298.pdf Size:251K _aosemi

AOW2918
AOW2918

AOW298 100V N-Channel MOSFET General Description Product Summary VDS The AOW298 uses Trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 58A frequency switching performance. Power losses are RDS(ON) (at VGS=10V) < 14.5mΩ minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is wel

Datasheet: AOW14N50 , AOW15S60 , AOW15S65 , AOW20C60 , AOW20S60 , AOW2500 , AOW25S65 , AOW284 , IRF540N , AOW298 , AOW29S50 , AOW410 , AOW418 , AOW480 , AOW482 , AOW4S60 , AOW7S60 .

 


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