AOW29S50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOW29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOW29S50 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 120Ahigh levels of performance and robustness in switching RDS(ON),max 0.15applications. Qg,typ 26.6nCBy providing low RDS(on), Qg and EOSS along with

isc N-Channel MOSFET Transistor AOW29S50FEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

AOW298 100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW298 uses Trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 58Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

AOW296/AOWF296TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)

AOW2918100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW2918 uses Trench MOSFET technology that 100Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 90Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

AOW290100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)

AOW292100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 105A Low Gate Charge RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOW298FEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

isc N-Channel MOSFET Transistor AOW296FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

isc N-Channel MOSFET Transistor AOW2918FEATURESDrain Current I = 90A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

isc N-Channel MOSFET Transistor AOW290FEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

isc N-Channel MOSFET Transistor AOW292FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene