Справочник MOSFET. AOW29S50

 

AOW29S50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOW29S50
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 357 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 29 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 26.6 nC
   trⓘ - Время нарастания: 39 ns
   Cossⓘ - Выходная емкость: 88 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для AOW29S50

 

 

AOW29S50 Datasheet (PDF)

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 aow29s50.pdf

AOW29S50 AOW29S50

AOW29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOW29S50 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 120Ahigh levels of performance and robustness in switching RDS(ON),max 0.15applications. Qg,typ 26.6nCBy providing low RDS(on), Qg and EOSS along with

 ..2. Size:300K  inchange semiconductor
 aow29s50.pdf

AOW29S50 AOW29S50

isc N-Channel MOSFET Transistor AOW29S50FEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:251K  aosemi
 aow298.pdf

AOW29S50 AOW29S50

AOW298 100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW298 uses Trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 58Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 9.2. Size:424K  aosemi
 aow296.pdf

AOW29S50 AOW29S50

AOW296/AOWF296TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)

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 aow2918.pdf

AOW29S50 AOW29S50

AOW2918100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW2918 uses Trench MOSFET technology that 100Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 90Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

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 aow290.pdf

AOW29S50 AOW29S50

AOW290100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)

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 aow292.pdf

AOW29S50 AOW29S50

AOW292100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 105A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:283K  inchange semiconductor
 aow298.pdf

AOW29S50 AOW29S50

isc N-Channel MOSFET Transistor AOW298FEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 9.7. Size:284K  inchange semiconductor
 aow296.pdf

AOW29S50 AOW29S50

isc N-Channel MOSFET Transistor AOW296FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

 9.8. Size:283K  inchange semiconductor
 aow2918.pdf

AOW29S50 AOW29S50

isc N-Channel MOSFET Transistor AOW2918FEATURESDrain Current I = 90A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

 9.9. Size:283K  inchange semiconductor
 aow290.pdf

AOW29S50 AOW29S50

isc N-Channel MOSFET Transistor AOW290FEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 9.10. Size:283K  inchange semiconductor
 aow292.pdf

AOW29S50 AOW29S50

isc N-Channel MOSFET Transistor AOW292FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

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