AOW410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOW410 Datasheet (PDF)

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AOW410100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOW410 is fabricated with SDMOSTM trench 150Atechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V)charge & low Qrr.The result is outstanding efficiency with

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isc N-Channel MOSFET Transistor AOW410FEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

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AOW418100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOW418 is fabricated with SDMOSTM trench 105A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate

9.2. Size:284K inchange semiconductor
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isc N-Channel MOSFET Transistor AOW418FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

Otros transistores... AOW20C60 , AOW20S60 , AOW2500 , AOW25S65 , AOW284 , AOW2918 , AOW298 , AOW29S50 , IRF1404 , AOW418 , AOW480 , AOW482 , AOW4S60 , AOW7S60 , AOW7S65 , AOWF10N60 , AOWF10N65 .