AOW410 Datasheet and Replacement
Type Designator: AOW410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 594 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-262
AOW410 substitution
AOW410 Datasheet (PDF)
aow410.pdf

AOW410100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOW410 is fabricated with SDMOSTM trench 150Atechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V)charge & low Qrr.The result is outstanding efficiency with
aow410.pdf

isc N-Channel MOSFET Transistor AOW410FEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
aow418.pdf

AOW418100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOW418 is fabricated with SDMOSTM trench 105A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate
aow418.pdf

isc N-Channel MOSFET Transistor AOW418FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener
Datasheet: AOW20C60 , AOW20S60 , AOW2500 , AOW25S65 , AOW284 , AOW2918 , AOW298 , AOW29S50 , IRF1404 , AOW418 , AOW480 , AOW482 , AOW4S60 , AOW7S60 , AOW7S65 , AOWF10N60 , AOWF10N65 .
History: BUK102-50GL | HUFA75645P3
Keywords - AOW410 MOSFET datasheet
AOW410 cross reference
AOW410 equivalent finder
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History: BUK102-50GL | HUFA75645P3



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