AOW418 Todos los transistores

 

AOW418 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOW418
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 V
   Qgⓘ - Carga de la puerta: 69 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 382 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO-262

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AOW418 Datasheet (PDF)

 ..1. Size:254K  aosemi
aow418.pdf

AOW418
AOW418

AOW418100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOW418 is fabricated with SDMOSTM trench 105A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate

 ..2. Size:284K  inchange semiconductor
aow418.pdf

AOW418
AOW418

isc N-Channel MOSFET Transistor AOW418FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

 9.1. Size:254K  aosemi
aow410.pdf

AOW418
AOW418

AOW410100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOW410 is fabricated with SDMOSTM trench 150Atechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V)charge & low Qrr.The result is outstanding efficiency with

 9.2. Size:283K  inchange semiconductor
aow410.pdf

AOW418
AOW418

isc N-Channel MOSFET Transistor AOW410FEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

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