AOW418 - параметры транзистора MOSFET, его аналоги, datasheet

AOW418 Datasheet (PDF)

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AOW418100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOW418 is fabricated with SDMOSTM trench 105A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate

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isc N-Channel MOSFET Transistor AOW418FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

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AOW410100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOW410 is fabricated with SDMOSTM trench 150Atechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V)charge & low Qrr.The result is outstanding efficiency with

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isc N-Channel MOSFET Transistor AOW410FEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

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