AOW480 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOW480 Datasheet (PDF)

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AOW48080V N-Channel MOSFETTMSDMOSGeneral Description Product Summary VDS 80VThe AOW480 is fabricated with SDMOSTM trenchtechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V) 180Acharge & low Qrr.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

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isc N-Channel MOSFET Transistor AOW480FEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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AOW48280V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AOW482 is fabricated with SDMOSTM trench ID (at VGS=10V) 105Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

9.2. Size:298K inchange semiconductor
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isc N-Channel MOSFET Transistor AOW482FEATURESDrain Current I =105A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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