AOW7S65 Todos los transistores

 ..1. Size:261K  aosemi
 aow7s65.pdf

AOW7S65/AOWF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW7S65 & AOWF7S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 30A designed to deliver high levels of performance and RDS(ON),max 0.65 robustness in switching applications. Qg,typ 9.2nC By providing low RDS(on), Qg and EO

 ..2. Size:261K  aosemi
 aow7s65 aowf7s65.pdf

AOW7S65/AOWF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW7S65 & AOWF7S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 30A designed to deliver high levels of performance and RDS(ON),max 0.65 robustness in switching applications. Qg,typ 9.2nC By providing low RDS(on), Qg and EO

 ..3. Size:300K  inchange semiconductor
 aow7s65.pdf

isc N-Channel MOSFET Transistor AOW7S65 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 8.1. Size:271K  aosemi
 aow7s60.pdf

AOW7S60/AOWF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW7S60 & AOWF7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOS

 8.2. Size:627K  aosemi
 aow7s60 aowf7s60.pdf

AOW7S60/AOWF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW7S60 & AOWF7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOSS

 8.3. Size:300K  inchange semiconductor
 aow7s60.pdf

isc N-Channel MOSFET Transistor AOW7S60 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a