AOW7S65 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOW7S65
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 104 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 30 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.65 Ohm
Тип корпуса: TO-262
AOW7S65 Datasheet (PDF)
aow7s65.pdf
AOW7S65/AOWF7S65TM650V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW7S65 & AOWF7S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 30Adesigned to deliver high levels of performance and RDS(ON),max 0.65robustness in switching applications. Qg,typ 9.2nCBy providing low RDS(on), Qg and EO
aow7s65.pdf
isc N-Channel MOSFET Transistor AOW7S65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aow7s60.pdf
AOW7S60/AOWF7S60TM600V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW7S60 & AOWF7S60 have been fabricated usingthe advanced MOSTM high voltage process that is IDM 33Adesigned to deliver high levels of performance and RDS(ON),max 0.6robustness in switching applications. Qg,typ 8.2nCBy providing low RDS(on), Qg and EOS
aow7s60.pdf
isc N-Channel MOSFET Transistor AOW7S60FEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
