AOWF12N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOWF12N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 164 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Paquete / Cubierta: TO-262F
Búsqueda de reemplazo de AOWF12N60 MOSFET
AOWF12N60 Datasheet (PDF)
aowf12n60.pdf

AOW12N60/AOWF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N60 & AOWF12N60 have been fabricated 700V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and
aowf12n65.pdf

AOW12N65/AOWF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW12N65 & AOWF12N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aowf12n50.pdf

AOW12N50/AOWF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N50 & AOWF12N50 have been fabricated 600V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and
aowf12t60p.pdf

AOWF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
Otros transistores... AOWF10N65 , AOWF10T60P , AOWF11C60 , AOWF11N60 , AOWF11N70 , AOWF11S60 , AOWF11S65 , AOWF12N50 , 7N65 , AOWF12N65 , AOWF12T60P , AOWF14N50 , AOWF15S60 , AOWF15S65 , AOWF20S60 , AOWF25S65 , AOWF2606 .
History: AUIRF7736M2TR1 | NTD4804NA-1G
History: AUIRF7736M2TR1 | NTD4804NA-1G



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