All MOSFET. AOWF12N60 Datasheet

 

AOWF12N60 Datasheet and Replacement


   Type Designator: AOWF12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 164 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-262F
 

 AOWF12N60 substitution

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AOWF12N60 Datasheet (PDF)

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AOWF12N60

AOW12N60/AOWF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N60 & AOWF12N60 have been fabricated 700V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and

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 aowf12n65.pdf pdf_icon

AOWF12N60

AOW12N65/AOWF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW12N65 & AOWF12N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.1. Size:281K  aosemi
 aowf12n50.pdf pdf_icon

AOWF12N60

AOW12N50/AOWF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N50 & AOWF12N50 have been fabricated 600V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and

 8.1. Size:222K  aosemi
 aowf12t60p.pdf pdf_icon

AOWF12N60

AOWF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

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Datasheet: AOWF10N65 , AOWF10T60P , AOWF11C60 , AOWF11N60 , AOWF11N70 , AOWF11S60 , AOWF11S65 , AOWF12N50 , 7N65 , AOWF12N65 , AOWF12T60P , AOWF14N50 , AOWF15S60 , AOWF15S65 , AOWF20S60 , AOWF25S65 , AOWF2606 .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - AOWF12N60 MOSFET datasheet

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