AOWF12T60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOWF12T60P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 50 nC
   trⓘ - Tiempo de subida: 72 nS
   Cossⓘ - Capacitancia de salida: 71 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm
   Paquete / Cubierta: TO-262F

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AOWF12T60P Datasheet (PDF)

..1. Size:222K aosemi
aowf12t60p.pdf

AOWF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

8.1. Size:262K aosemi
aowf12n60.pdf

AOW12N60/AOWF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N60 & AOWF12N60 have been fabricated 700V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and

8.2. Size:240K aosemi
aowf12n65.pdf

AOW12N65/AOWF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW12N65 & AOWF12N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

8.3. Size:281K aosemi
aowf12n50.pdf

AOW12N50/AOWF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N50 & AOWF12N50 have been fabricated 600V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and

8.4. Size:476K aosemi
aowf125a60.pdf

AOW125A60/AOWF125A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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