AOWF12T60P MOSFET Datasheet: N-Ch, 600V, 12A. Full specification with pinout and replacement list

AOWF12T60P Specs and Replacement

Type Designator: AOWF12T60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 71 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm

Package: TO-262F

AOWF12T60P substitution

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AOWF12T60P datasheet

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AOWF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒

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AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOW12N60 & AOWF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:262K aosemi
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AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS The AOW12N60 & AOWF12N60 have been fabricated 700V@150 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and ... See More ⇒

8.3. Size:240K aosemi
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AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒