AOWF12T60P Datasheet and Replacement
Type Designator: AOWF12T60P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 71 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO-262F
AOWF12T60P substitution
AOWF12T60P Datasheet (PDF)
aowf12t60p.pdf

AOWF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
aowf12n60.pdf

AOW12N60/AOWF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N60 & AOWF12N60 have been fabricated 700V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and
aowf12n65.pdf

AOW12N65/AOWF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW12N65 & AOWF12N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aowf12n50.pdf

AOW12N50/AOWF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N50 & AOWF12N50 have been fabricated 600V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and
Datasheet: AOWF11C60 , AOWF11N60 , AOWF11N70 , AOWF11S60 , AOWF11S65 , AOWF12N50 , AOWF12N60 , AOWF12N65 , 2N7000 , AOWF14N50 , AOWF15S60 , AOWF15S65 , AOWF20S60 , AOWF25S65 , AOWF2606 , AOWF412 , AOWF4N60 .
History: P0620ED | OSG65R360GEF | SVS14N65SD2 | SSF2610E | IPB60R099CP | TPCA8027-H | 2SK1455
Keywords - AOWF12T60P MOSFET datasheet
AOWF12T60P cross reference
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History: P0620ED | OSG65R360GEF | SVS14N65SD2 | SSF2610E | IPB60R099CP | TPCA8027-H | 2SK1455



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