All MOSFET. AOWF12T60P Datasheet

 

AOWF12T60P MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOWF12T60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO-262F

 AOWF12T60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOWF12T60P Datasheet (PDF)

 ..1. Size:222K  aosemi
 aowf12t60p.pdf

AOWF12T60P AOWF12T60P

AOWF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 8.1. Size:262K  aosemi
 aowf12n60.pdf

AOWF12T60P AOWF12T60P

AOW12N60/AOWF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N60 & AOWF12N60 have been fabricated 700V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and

 8.2. Size:240K  aosemi
 aowf12n65.pdf

AOWF12T60P AOWF12T60P

AOW12N65/AOWF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOW12N65 & AOWF12N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.3. Size:281K  aosemi
 aowf12n50.pdf

AOWF12T60P AOWF12T60P

AOW12N50/AOWF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW12N50 & AOWF12N50 have been fabricated 600V@15012Ausing an advanced high voltage MOSFET process that is ID (at VGS=10V)designed to deliver high levels of performance and

 8.4. Size:476K  aosemi
 aowf125a60.pdf

AOWF12T60P AOWF12T60P

AOW125A60/AOWF125A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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