All MOSFET. AOWF12T60P Datasheet

 

AOWF12T60P MOSFET. Datasheet pdf. Equivalent

Type Designator: AOWF12T60P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 72 nS

Drain-Source Capacitance (Cd): 71 pF

Maximum Drain-Source On-State Resistance (Rds): 0.52 Ohm

Package: TO-262F

AOWF12T60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOWF12T60P Datasheet (PDF)

1.1. aowf12t60p.pdf Size:222K _aosemi

AOWF12T60P
AOWF12T60P

AOWF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology VDS @ Tj,max 700V • Low RDS(ON) IDM 48A • Low Ciss and Crss RDS(ON),max < 0.52Ω • High Current Capability Qg,typ 33nC • RoHS and Halogen Free Compliant Eoss @ 400V 4.4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL

4.1. aowf12n60.pdf Size:262K _aosemi

AOWF12T60P
AOWF12T60P

AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS The AOW12N60 & AOWF12N60 have been fabricated 700V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.55Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss a

4.2. aowf12n50.pdf Size:281K _aosemi

AOWF12T60P
AOWF12T60P

AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS The AOW12N50 & AOWF12N50 have been fabricated 600V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.52Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss

4.3. aowf12n65.pdf Size:240K _aosemi

AOWF12T60P
AOWF12T60P

AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.72Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss al

Datasheet: AOWF11C60 , AOWF11N60 , AOWF11N70 , AOWF11S60 , AOWF11S65 , AOWF12N50 , AOWF12N60 , AOWF12N65 , IRF2807 , AOWF14N50 , AOWF15S60 , AOWF15S65 , AOWF20S60 , AOWF25S65 , AOWF2606 , AOWF412 , AOWF4N60 .

 


AOWF12T60P
  AOWF12T60P
  AOWF12T60P
 

social 

LIST

Last Update

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |