AOWF20S60 Todos los transistores

 

AOWF20S60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOWF20S60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 68 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.199 Ohm

Encapsulados: TO-262F

 Búsqueda de reemplazo de AOWF20S60 MOSFET

- Selecciónⓘ de transistores por parámetros

 

AOWF20S60 datasheet

 ..1. Size:279K  aosemi
 aow20s60 aowf20s60.pdf pdf_icon

AOWF20S60

AOW20S60/AOWF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW20S60 & AOWF20S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 80A designed to deliver high levels of performance and RDS(ON),max 0.199 robustness in switching applications. Qg,typ 20nC By providing low RDS(on), Qg a

 ..2. Size:279K  aosemi
 aowf20s60.pdf pdf_icon

AOWF20S60

AOW20S60/AOWF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW20S60 & AOWF20S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 80A designed to deliver high levels of performance and RDS(ON),max 0.199 robustness in switching applications. Qg,typ 20nC By providing low RDS(on), Qg a

 9.1. Size:424K  aosemi
 aowf296.pdf pdf_icon

AOWF20S60

AOW296/AOWF296 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)

 9.2. Size:265K  aosemi
 aow25s65 aowf25s65.pdf pdf_icon

AOWF20S60

AOW25S65/AOWF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW25S65 & AOWF25S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 104A designed to deliver high levels of performance and RDS(ON),max 0.19 robustness in switching applications. Qg,typ 26.4nC By providing low RDS(on), Qg

MOSTRAR MÁS

Otros transistores... AOWF11S65 , AOWF12N50 , AOWF12N60 , AOWF12N65 , AOWF12T60P , AOWF14N50 , AOWF15S60 , AOWF15S65 , IRF9540N , AOWF25S65 , AOWF2606 , AOWF412 , AOWF4N60 , AOWF4S60 , AOWF7S65 , AOWF8N50 , AOWF9N70 .

History: SWD110R03VT | AP03N40AJ-HF | SWD088R06VT | BSC080N03MS | AP0103GP-HF | JBE112Q | BRI2N70

 

 

 

 

↑ Back to Top
.