Справочник MOSFET. AOWF20S60

 

AOWF20S60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOWF20S60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19.8 nC
   trⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 68 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.199 Ohm
   Тип корпуса: TO-262F

 Аналог (замена) для AOWF20S60

 

 

AOWF20S60 Datasheet (PDF)

 ..1. Size:279K  aosemi
 aowf20s60.pdf

AOWF20S60 AOWF20S60

AOW20S60/AOWF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW20S60 & AOWF20S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 80Adesigned to deliver high levels of performance and RDS(ON),max 0.199robustness in switching applications. Qg,typ 20nCBy providing low RDS(on), Qg a

 9.1. Size:424K  aosemi
 aowf296.pdf

AOWF20S60 AOWF20S60

AOW296/AOWF296TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)

 9.2. Size:256K  aosemi
 aowf2606.pdf

AOWF20S60 AOWF20S60

AOWF260660V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOWF2606 uses Trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 51Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 9.3. Size:266K  aosemi
 aowf240.pdf

AOWF20S60 AOWF20S60

AOWF24040V N-Channel MOSFETGeneral Description Product SummaryThe AOWF240 uses Trench MOSFET technology that isVDS40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 83Afrequency switching performance. Power losses are

 9.4. Size:265K  aosemi
 aowf25s65.pdf

AOWF20S60 AOWF20S60

AOW25S65/AOWF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW25S65 & AOWF25S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 104Adesigned to deliver high levels of performance and RDS(ON),max 0.19robustness in switching applications. Qg,typ 26.4nCBy providing low RDS(on), Qg

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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