AOWF7S65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOWF7S65
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 30 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Encapsulados: TO-262F
Búsqueda de reemplazo de AOWF7S65 MOSFET
- Selecciónⓘ de transistores por parámetros
AOWF7S65 datasheet
aowf7s65.pdf
AOW7S65/AOWF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW7S65 & AOWF7S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 30A designed to deliver high levels of performance and RDS(ON),max 0.65 robustness in switching applications. Qg,typ 9.2nC By providing low RDS(on), Qg and EO
aow7s65 aowf7s65.pdf
AOW7S65/AOWF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW7S65 & AOWF7S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 30A designed to deliver high levels of performance and RDS(ON),max 0.65 robustness in switching applications. Qg,typ 9.2nC By providing low RDS(on), Qg and EO
aowf7s60.pdf
AOW7S60/AOWF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW7S60 & AOWF7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOS
aow7s60 aowf7s60.pdf
AOW7S60/AOWF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW7S60 & AOWF7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOSS
Otros transistores... AOWF15S60 , AOWF15S65 , AOWF20S60 , AOWF25S65 , AOWF2606 , AOWF412 , AOWF4N60 , AOWF4S60 , 4435 , AOWF8N50 , AOWF9N70 , AOY2N60 , AOY423 , AOY514 , AOY516 , AOY526 , AOY528 .
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