AOWF7S65 Datasheet and Replacement
Type Designator: AOWF7S65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-262F
AOWF7S65 substitution
AOWF7S65 Datasheet (PDF)
aowf7s65.pdf

AOW7S65/AOWF7S65TM650V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW7S65 & AOWF7S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 30Adesigned to deliver high levels of performance and RDS(ON),max 0.65robustness in switching applications. Qg,typ 9.2nCBy providing low RDS(on), Qg and EO
aowf7s60.pdf

AOW7S60/AOWF7S60TM600V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW7S60 & AOWF7S60 have been fabricated usingthe advanced MOSTM high voltage process that is IDM 33Adesigned to deliver high levels of performance and RDS(ON),max 0.6robustness in switching applications. Qg,typ 8.2nCBy providing low RDS(on), Qg and EOS
aowf780a70.pdf

AOWF780A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOWF15S60 , AOWF15S65 , AOWF20S60 , AOWF25S65 , AOWF2606 , AOWF412 , AOWF4N60 , AOWF4S60 , 2SK3568 , AOWF8N50 , AOWF9N70 , AOY2N60 , AOY423 , AOY514 , AOY516 , AOY526 , AOY528 .
History: SI1013X | IRFSL3107PBF | AON6206 | HMS21N60F
Keywords - AOWF7S65 MOSFET datasheet
AOWF7S65 cross reference
AOWF7S65 equivalent finder
AOWF7S65 lookup
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AOWF7S65 replacement
History: SI1013X | IRFSL3107PBF | AON6206 | HMS21N60F



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