AOY423 Todos los transistores

 

AOY423 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOY423

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: TO-251B

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AOY423 datasheet

 ..1. Size:374K  aosemi
aoy423.pdf pdf_icon

AOY423

AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

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AOY423

AOD423/AOI423/AOY423 TM 30V P-Channel AlphaSGT General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

 ..3. Size:279K  inchange semiconductor
aoy423.pdf pdf_icon

AOY423

INCHANGE Semiconductor isc P-Channel MOSFET Transistor AOY423 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

Otros transistores... AOWF2606 , AOWF412 , AOWF4N60 , AOWF4S60 , AOWF7S65 , AOWF8N50 , AOWF9N70 , AOY2N60 , 13N50 , AOY514 , AOY516 , AOY526 , AOY528 , 2SJ154 , 2SK1101-01MR , 2SK3515-01MR , 2SK436 .

History: AOW25S65 | WMQ20DN06TS | SFG10R10BF

 

 

 

 

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