2SK850 Todos los transistores

 

2SK850 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK850
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 1500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SC65

 Búsqueda de reemplazo de MOSFET 2SK850

 

2SK850 Datasheet (PDF)

 ..1. Size:57K  toshiba
2sk850.pdf

2SK850
2SK850

 ..2. Size:218K  inchange semiconductor
2sk850.pdf

2SK850
2SK850

isc N-Channel MOSFET Transistor 2SK850DESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D

 9.1. Size:62K  toshiba
2sk856.pdf

2SK850
2SK850

 9.2. Size:121K  nec
2sk855.pdf

2SK850
2SK850

 9.3. Size:131K  nec
2sk854.pdf

2SK850
2SK850

 9.4. Size:201K  inchange semiconductor
2sk857.pdf

2SK850
2SK850

isc N-Channel MOSFET Transistor 2SK857DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

 9.5. Size:60K  inchange semiconductor
2sk851.pdf

2SK850
2SK850

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION Drain Current ID=30A@ TC=25 Drain Source Voltage- : VDSS=200V(Min) APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 200 V

 9.6. Size:198K  inchange semiconductor
2sk856.pdf

2SK850
2SK850

isc N-Channel MOSFET Transistor 2SK856DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

 9.7. Size:62K  inchange semiconductor
2sk859.pdf

2SK850
2SK850

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VA

 9.8. Size:59K  inchange semiconductor
2sk858.pdf

2SK850
2SK850

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- : VDSS=600V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VA

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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